IXFP4N60P3 IXYS, IXFP4N60P3 Datasheet

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IXFP4N60P3

Manufacturer Part Number
IXFP4N60P3
Description
Polar3 HiperFETS
Manufacturer
IXYS
Datasheet

Specifications of IXFP4N60P3

Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
4
Rds(on), Max, Tj=25°c, (?)
2.2
Ciss, Typ, (pf)
365
Qg, Typ, (nc)
6.9
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
114
Rthjc, Max, (ºc/w)
1.10
Package Style
TO-220
Polar3
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 250μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFA4N60P3
IXFY4N60P3
IXFP4N60P3
-55 ... +150
-55 ... +150
600
Characteristic Values
Min.
3.0
Maximum Ratings
1.13 / 10
0.35
2.50
3.00
600
600
±30
±40
200
114
150
300
260
35
Typ.
4
8
2
±100 nA
Nm/lb.in.
100 μA
Max.
5.0
10 μA
2.2
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
V
I
R
TO-252 (IXFY)
TO-263 AA (IXFA)
TO-220AB (IXFP)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
DS(ON)
G
D S
= 600V
= 4A
≤ ≤ ≤ ≤ ≤ 2.2Ω Ω Ω Ω Ω
and Q
G
G
S
S
Tab = Drain
D
D (Tab)
G
D (Tab)
D (Tab)
= Drain
DS100427(12/11)

Related parts for IXFP4N60P3

IXFP4N60P3 Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Maximum Ratings 600 = 1MΩ 600 GS ±30 ± 200 ≤ 150° 114 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... I DSS D D25 0.5 • I 1.7 DSS D D25 2.8 0.50 Characteristic Values Min. Typ. JM 0.35 2.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 TO-252 AA Outline Max S Ω Dim. Millimeter nC Min. Max 2.19 2.38 A1 0.89 1. 0.13 b 0.64 0.89 1.10 °C/W b1 0.76 1.14 ° ...

Page 3

... Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFP4N60P3 = 25º Value vs 100 125 150 75 100 125 150 ...

Page 4

... T = 25º 0.8 0.9 1.0 1 iss 1 C oss C rss 0 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Fig. 8. Transconductance 40ºC J 25ºC 125ºC 0.5 1 1.5 2 2 Amperes D Fig. 10. Gate Charge V = 300V 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance aaaaaa 0.001 0.01 Pulse Width - Seconds IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 0.1 IXYS REF: F_4N60P3(K2)12-07-11 1 ...

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