IXFR48N60Q3 IXYS, IXFR48N60Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFR48N60Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFR48N60Q3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.154
• Ciss, Typ, (pf): 7020
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
160
140
120
100
100
80
60
40
20
80
70
60
50
40
30
20
10
10
0
0
0.2
4.5
0
f
= 1 MHz
0.3
5.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
5.5
10
0.5
6.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
6.5
0.6
15
T
J
T
= 125ºC
J
V
V
V
= 125ºC
7.0
0.7
DS
SD
GS
20
- Volts
- Volts
- Volts
0.8
7.5
25
8.0
0.9
25ºC
T
J
C rss
C iss
C oss
= 25ºC
8.5
1.0
30
9.0
1.1
- 40ºC
35
9.5
1.2
10.0
1.3
40
1000
100
0.1
10
1
70
60
50
40
30
20
10
16
14
12
10
10
0
8
6
4
2
0
0
0
T
T
Single Pulse
J
C
R
= 150ºC
V
I
I
= 25ºC
D
G
DS(on)
DS
= 24A
= 10mA
10
Fig. 12. Forward-Bias Safe Operating Area
= 300V
Limit
20
50
Fig. 8. Transconductance
Fig. 10. Gate Charge
30
Q
G
V
- NanoCoulombs
I
D
DS
- Amperes
100
- Volts
100
40
IXFR48N60Q3
50
T
J
= - 40ºC
150
60
25ºC
125ºC
70
25µs
100µs
1ms
10ms
1,000
200
80