IXFR64N60Q3 IXYS, IXFR64N60Q3 Datasheet - Page 4
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IXFR64N60Q3
Manufacturer Part Number
IXFR64N60Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet
1.IXFR64N60Q3.pdf
(5 pages)
Specifications of IXFR64N60Q3
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
42
Rds(on), Max, Tj=25°c, (?)
0.104
Ciss, Typ, (pf)
9930
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
ISOPLUS247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
160
120
100
80
40
10
80
70
60
50
40
30
20
10
0
0
0.3
3.5
0
f
= 1 MHz
0.4
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.5
10
0.6
5.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
15
J
0.7
= 125ºC
5.5
V
V
V
DS
SD
GS
T
J
0.8
6.0
20
- Volts
- Volts
= 125ºC
- Volts
0.9
6.5
25
T
J
C iss
C oss
C rss
= 25ºC
1.0
7.0
25ºC
30
1.1
7.5
35
- 40ºC
1.2
8.0
1.3
8.5
40
1000
100
0.1
10
1
70
60
50
40
30
20
10
16
14
12
10
10
0
8
6
4
2
0
0
0
T
T
Single Pulse
J
C
R
= 150ºC
V
I
I
= 25ºC
DS(on)
D
G
DS
10
= 32A
= 10mA
= 300V
Fig. 12. Forward-Bias Safe Operating Area
Limit
50
20
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
100
Q
G
- NanoCoulombs
V
I
D
40
DS
- Amperes
100
- Volts
IXFR64N60Q3
150
50
T
J
60
= - 40ºC
200
70
25ºC
125ºC
80
25µs
250µs
1ms
250
1,000
90