IXFR64N60Q3 IXYS, IXFR64N60Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFR64N60Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFR64N60Q3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 42
• Rds(on), Max, Tj=25°c, (?): 0.104
• Ciss, Typ, (pf): 9930
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 568
• Rthjc, Max, (ºc/w): 0.22
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
160
120
100
80
40
10
80
70
60
50
40
30
20
10
0
0
0.3
3.5
0
f
= 1 MHz
0.4
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.5
10
0.6
5.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
15
J
0.7
= 125ºC
5.5
V
V
V
DS
SD
GS
T
J
0.8
6.0
20
- Volts
- Volts
= 125ºC
- Volts
0.9
6.5
25
T
J
C iss
C oss
C rss
= 25ºC
1.0
7.0
25ºC
30
1.1
7.5
35
- 40ºC
1.2
8.0
1.3
8.5
40
1000
100
0.1
10
1
70
60
50
40
30
20
10
16
14
12
10
10
0
8
6
4
2
0
0
0
T
T
Single Pulse
J
C
R
= 150ºC
V
I
I
= 25ºC
DS(on)
D
G
DS
10
= 32A
= 10mA
= 300V
Fig. 12. Forward-Bias Safe Operating Area
Limit
50
20
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
100
Q
G
- NanoCoulombs
V
I
D
40
DS
- Amperes
100
- Volts
IXFR64N60Q3
150
50
T
J
60
= - 40ºC
200
70
25ºC
125ºC
80
25µs
250µs
1ms
250
1,000
90