IXFK64N60Q3 IXYS, IXFK64N60Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFK64N60Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFK64N60Q3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.095
• Ciss, Typ, (pf): 9930
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.10
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
160
120
100
80
40
10
80
70
60
50
40
30
20
10
0
0
0.3
3.5
0
f
= 1 MHz
0.4
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.5
10
0.6
5.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
15
J
0.7
5.5
= 125ºC
V
V
V
SD
DS
GS
T
J
0.8
6.0
- Volts
20
- Volts
= 125ºC
- Volts
0.9
6.5
25
T
J
C iss
C oss
C rss
= 25ºC
1.0
7.0
25ºC
30
1.1
7.5
35
- 40ºC
1.2
8.0
1.3
8.5
40
1000
100
0.1
10
70
60
50
40
30
20
10
16
14
12
10
1
0
8
6
4
2
0
10
0
0
T
T
Single Pulse
V
I
I
D
G
J
C
DS
= 150ºC
10
= 32A
= 10mA
= 25ºC
= 300V
Fig. 12. Forward-Bias Safe Operating Area
50
R
DS(on)
20
Limit
Fig. 8. Transconductance
Fig. 10. Gate Charge
30
100
Q
G
- NanoCoulombs
I
D
V
40
DS
- Amperes
100
- Volts
150
50
IXFK64N60Q3
IXFX64N60Q3
T
J
60
= - 40ºC
200
70
25ºC
125ºC
80
250
25µs
100µs
1ms
1,000
90