IXFN82N60Q3 IXYS, IXFN82N60Q3 Datasheet

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IXFN82N60Q3

Manufacturer Part Number
IXFN82N60Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFN82N60Q3

Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
13500
Qg, Typ, (nc)
275
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
SOT-227
HiperFET
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 41A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFN82N60Q3
600
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
Typ.
600
600
±30
±40
240
960
150
66
82
50
30
4
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
6.5
50 μA
75 mΩ
3 mA
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
Intrinsic Gate Resistance
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
75mΩ Ω Ω Ω Ω
G
600V
66A
300ns
D
DS100340(05/11)
S

Related parts for IXFN82N60Q3

IXFN82N60Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 41A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN82N60Q3 Maximum Ratings 600 = 1MΩ 600 GS ±30 ±40 66 240 ≤ 150° 960 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... I = 41A 88 DSS D 120 0.05 Characteristic Values Min. Typ. JM 1.9 15.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN82N60Q3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.13 °C/W °C/W Max 330 A 1.5 V 300 ns μ ...

Page 3

... Value vs 125º 25º 100 120 140 160 180 IXFN82N60Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - ...

Page 4

... T = 25º 1.1 1.3 1.5 1.7 1000 C iss 100 C oss 10 C rss IXFN82N60Q3 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 300V 41A 10mA 100 150 200 250 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN82N60Q3 1 10 IXYS REF: F_82N60Q3(Q9) 5-19-11 ...

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