IXFN80N60P3 IXYS, IXFN80N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFN80N60P3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN80N60P3

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.07
• Ciss, Typ, (pf): 13100
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: SOT-227B

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
240
200
160
120
120
100
100
80
40
80
60
40
20
10
0
0
1
0.3
3.0
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
4.5
15
= 125ºC
0.7
V
V
V
SD
DS
GS
0.8
5.0
- Volts
20
- Volts
- Volts
T
J
= 125ºC
0.9
- 40ºC
T
25ºC
5.5
25
J
= 25ºC
C oss
C iss
C rss
1.0
6.0
30
1.1
6.5
35
1.2
7.0
1.3
40
1000
100
10
160
140
120
100
1
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
10
0
0
0
T
T
Single Pulse
J
C
R
V
I
I
= 150ºC
= 25ºC
20
D
G
DS(on)
DS
= 40A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 300V
20
Limit
40
Fig. 8. Transconductance
60
40
Fig. 10. Gate Charge
Q
G
80
- NanoCoulombs
I
V
D
DS
- Amperes
100
- Volts
100
60
IXFN80N60P3
120
80
140
T
J
= - 40ºC
160
100
25ºC
125ºC
180
100µs
1ms
1,000
120
200