IXFM11N80 IXYS, IXFM11N80 Datasheet - Page 3

• Manufacturer Part Number: IXFM11N80
• Description: Standard HiperFETs (50V to 1200V)
• Manufacturer: IXYS

Specifications of IXFM11N80

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 11
• Rds(on), Max, Tj=25°c, (?): 0.95
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 128
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-204

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1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
2
11N80
13N80
= 25°C
-25
T
J
4
= 25°C
2
Case Temperature
6
DS(on)
0
8 10 12 14 16 18 20 22 24 26
4
T
25
vs. Drain Current
I
C
D
V
V
- Degrees C
- Amperes
DS
GS
= 10V
50
- Volts
6
V
GS
75
= 15V
8
V
100
GS
= 10V
10
125
7V
8V
150
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
8
6
4
2
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
0
T
V
IXFH 11N80
IXFM 11N80
J
DS
1
-25
-25
= 25°C
= 10V
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
0
0
3
T
25
T
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
6
75
75
IXFH 13N80
IXFM 13N80
I
7
D
100
100
= 6.5A
BV
8
DSS
125
125
9
150
150
10
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