IXFX32N80Q3 IXYS, IXFX32N80Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFX32N80Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFX32N80Q3

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 6940
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
90
80
70
60
50
40
30
20
10
10
50
45
40
35
30
25
20
15
10
0
5
0
0.3
4
0
f
4.5
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
5
0.5
10
5.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
6
15
T
T
J
J
0.7
V
V
V
6.5
= 125ºC
= 125ºC
DS
SD
GS
20
- Volts
- Volts
- Volts
0.8
7
25
7.5
25ºC
0.9
C iss
C oss
C rss
T
J
8
30
= 25ºC
1.0
8.5
- 40ºC
35
1.1
9
9.5
1.2
40
100
10
60
50
40
30
20
10
1
16
14
12
10
0
8
6
4
2
0
10
0
0
T
T
Single Pulse
R
J
C
V
I
I
DS(on)
D
G
= 150ºC
DS
= 25ºC
5
= 16A
= 10mA
= 400V
Limit
Fig. 12. Forward-Bias Safe Operating Area
10
50
15
Fig. 8. Transconductance
Fig. 10. Gate Charge
20
Q
G
V
- NanoCoulombs
I
D
DS
25
- Amperes
100
- Volts
100
30
35
IXFK32N80Q3
IXFX32N80Q3
T
J
= - 40ºC
40
150
125ºC
25ºC
45
50
1,000
25µs
100µs
1ms
200
55