IXFX32N90P IXYS, IXFX32N90P Datasheet - Page 4

• Manufacturer Part Number: IXFX32N90P
• Manufacturer: IXYS

Specifications of IXFX32N90P

• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.3
• Ciss, Typ, (pf): 10600
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
0.3
4
0
f
4.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
5
0.5
10
5.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
15
6
T
V
V
V
J
DS
SD
GS
= 125ºC
0.7
6.5
20
- Volts
- Volts
- Volts
T
J
= 125ºC
- 40ºC
25ºC
7
0.8
25
7.5
T
J
0.9
30
= 25ºC
C oss
C rss
C iss
8
1.0
35
8.5
1.1
40
9
100
50
45
40
35
30
25
20
15
10
16
14
12
10
10
8
6
4
2
0
5
0
1
10
0
0
T
T
Single Pulse
V
I
I
R
J
C
D
G
DS
5
DS(on)
= 150ºC
= 25ºC
= 16A
= 10mA
= 450V
50
Fig. 12. Forward-Bias Safe Operating Area
Limit
10
15
Fig. 8. Transconductance
100
Fig. 10. Gate Charge
20
Q
G
- NanoCoulombs
V
I
D
DS
25
150
- Amperes
100
- Volts
30
200
35
IXFK32N90P
IXFX32N90P
T
J
= - 40ºC
40
250
25ºC
125ºC
45
50
300
1,000
25µs
100µs
1ms
55