IXFH7N100P IXYS, IXFH7N100P Datasheet - Page 4

• Manufacturer Part Number: IXFH7N100P
• Manufacturer: IXYS

Specifications of IXFH7N100P

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 7
• Rds(on), Max, Tj=25°c, (?): 1.9
• Ciss, Typ, (pf): 2590
• Qg, Typ, (nc): 47
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
14
12
10
30
25
20
15
10
10
8
6
4
2
0
5
0
4.0
0.4
0
f
= 1 MHz
4.5
0.5
5
5.0
0.6
Fig. 9. Forward Voltage Drop of
10
C rss
Fig. 7. Input Admittance
Fig. 11. Capacitance
5.5
0.7
15
Intrinsic Diode
T
V
V
J
SD
DS
C oss
V
= 125ºC
GS
- Volts
- Volts
6.0
0.8
- Volts
20
T
J
= 125ºC
C iss
- 40ºC
25ºC
6.5
0.9
25
7.0
1.0
30
T
J
= 25ºC
7.5
1.1
35
8.0
1.2
40
1.00
0.10
0.01
16
14
12
10
14
12
10
0.00001
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
= 3.5A
= 10mA
Fig. 12. Maximum Transient Thermal Impedance
= 500V
2
10
0.0001
4
20
IXFA7N100P IXFA7N100P
Fig. 8. Transconductance
0.001
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
6
- NanoCoulombs
I
D
- Amperes
30
0.01
8
40
T
J
= - 40ºC
10
125ºC
0.1
IXFH7N100P
25ºC
50
12
IXYS REF: F_7N100P(56)9-16-08
1
60
14
16
70
10