IXFV10N100P IXYS, IXFV10N100P Datasheet - Page 4

• Manufacturer Part Number: IXFV10N100P
• Manufacturer: IXYS

Specifications of IXFV10N100P

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 1.4
• Ciss, Typ, (pf): 3030
• Qg, Typ, (nc): 58
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 380
• Rthjc, Max, (ºc/w): 0.33
• Package Style: PLUS220

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
10
10
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
5.5
0.3
0
f
= 1 MHz
6.0
0.4
5
Fig. 9. Forward Voltage Drop of
6.5
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
Intrinsic Diode
7.0
0.6
15
T
T
J
J
V
= 125ºC
V
V
= 125ºC
GS
SD
DS
- Volts
7.5
- Volts
0.7
20
- Volts
25ºC
8.0
0.8
25
C oss
C rss
C iss
8.5
0.9
30
T
J
- 40ºC
= 25ºC
9.0
1.0
35
9.5
1.1
40
1.00
0.10
0.01
16
14
12
10
14
12
10
0.00001
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
1
10
= 5A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 500V
IXFH10N100P IXFV10N100P
2
20
Fig. 8. Transconductance
3
0.001
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
30
G
Impedance
4
I
- NanoCoulombs
D
- Amperes
0.01
40
5
6
IXFV10N100PS
50
0.1
7
T
J
60
= - 40ºC
125ºC
25ºC
8
IXYS REF: F_10N100P (65)9-24-08
1
70
9
10
10
80