IXFN32N100Q3 IXYS, IXFN32N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN32N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN32N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 28
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 9940
• Qg, Typ, (nc): 195
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.16
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
10
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
4.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
4.5
5
5.0
0.5
10
Fig. 7. Input Admittance
0.6
5.5
Fig. 11. Capacitance
15
T
J
= 125ºC
0.7
V
V
6.0
V
DS
SD
GS
T
J
20
- Volts
= 125ºC
- Volts
- Volts
6.5
0.8
25
7.0
0.9
25ºC
C oss
C iss
C rss
T
J
= 25ºC
30
7.5
1.0
- 40ºC
35
8.0
1.1
8.5
1.2
40
100
0.1
10
1
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
DS
T
T
Single Pulse
J
C
(on)
V
I
I
= 150ºC
D
G
20
= 25ºC
DS
5
= 16A
= 10mA
Limit
Fig. 12. Forward-Bias Safe Operating Area
= 500V
10
40
Fig. 8. Transconductance
15
60
100
Fig. 10. Gate Charge
Q
20
80
G
V
I
- NanoCoulombs
D
IXFN32N100Q3
DS
- Amperes
- Volts
100
25
120
30
1,000
100µs
1ms
140
35
T
J
= - 40ºC
160
40
25ºC
125ºC
180
45
10,000
200
50