IXFK32N100Q3 IXYS, IXFK32N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFK32N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFK32N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 9940
• Qg, Typ, (nc): 195
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.10
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
10
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
0.3
4.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
4.5
0.4
5
0.5
5.0
10
Fig. 7. Input Admittance
5.5
0.6
Fig. 11. Capacitance
15
T
J
= 125ºC
V
0.7
V
6.0
V
DS
SD
GS
T
J
20
- Volts
= 125ºC
- Volts
- Volts
6.5
0.8
25
25ºC
7.0
0.9
C oss
C iss
C rss
T
J
30
= 25ºC
7.5
1.0
- 40ºC
35
8.0
1.1
8.5
1.2
40
100
0.1
10
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
20
DS
5
= 150ºC
= 25ºC
= 16A
= 10mA
Limit
= 500V
Fig. 12. Forward-Bias Safe Operating Area
10
40
Fig. 8. Transconductance
15
60
100
Fig. 10. Gate Charge
Q
20
80
G
I
- NanoCoulombs
D
V
DS
- Amperes
100
25
- Volts
IXFX32N100Q3
IXFK32N100Q3
120
30
1,000
140
100µs
1ms
35
T
J
= - 40ºC
160
40
25ºC
125ºC
180
45
10,000
200
50