IXFB44N100Q3 IXYS, IXFB44N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFB44N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFB44N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.22
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 264
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1560
• Rthjc, Max, (ºc/w): 0.08
• Package Style: PLUS264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
140
120
100
100
70
60
50
40
30
20
10
80
60
40
20
10
0
0
4.5
0.3
0
f
0.4
= 1 MHz
5.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5.5
10
0.6
Fig. 7. Input Admittance
6.0
Fig. 11. Capacitance
15
0.7
T
J
T
6.5
V
V
V
J
= 125ºC
DS
SD
GS
= 125ºC
0.8
20
- Volts
- Volts
- Volts
7.0
0.9
25
T
7.5
25ºC
J
C oss
C rss
1.0
C iss
= 25ºC
30
8.0
1.1
- 40ºC
35
8.5
1.2
9.0
1.3
40
1000
100
0.1
10
80
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= 22A
= 10mA
= 150ºC
R
= 25ºC
= 500V
DS(on)
10
40
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
80
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
G
120
- NanoCoulombs
30
I
D
V
IXFB44N100Q3
DS
- Amperes
1ms
100
- Volts
T
160
J
40
= - 40ºC
25ºC
125ºC
100µs
200
50
25µs
240
60
1,000
280
70