CPC3720 IXYS, CPC3720 Datasheet - Page 3

• Manufacturer Part Number: CPC3720
• Description: Depletion Mode MOSFETs
• Manufacturer: IXYS

Specifications of CPC3720

• Vds, Max, (v): 350(min)
• Id(on), Min, (a): 0.17
• Rds(on), Max, (?): 20
• Vgs(off), Max, (v): -3.9
• Ciss, Typ, (pf): 70
• Crss, Typ, (pf): -
• Qg, Typ, (nc): -
• Pd, (w): -
• Rthjc, Max, (ºc/w): 15
• Package Style: SOT-89

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
R00B
0.0001
0.001
200
180
160
140
120
100
80
60
40
20
1.0
0.1
35
30
25
20
15
10
0
5
0
-40
0
0
Maximum Rated Safe Operating Area
1
Output Characteristics
R
0
(V
ON
10
GS
Temperature (ºC)
2
vs. Temperature
=0V, I
(T
V
at 25ºC
V
A
DS
=25ºC)
DS
40
3
D
(V)
(V)
=90mA)
100
4
80
V
V
V
V
GS
GS
GS
GS
5
=0.0V
=-1.0V
=-1.5V
=-2.0V
120
1000
6
175
150
125
100
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
75
50
25
80
60
40
20
PERFORMANCE DATA*
0
0
0
-3.0
0
Capacitance vs. Drain Source Voltage
0
C
RSS
+125ºC
20
Transfer Characteristics
Power Dissipation vs.
Ambient Temperature
PRELIMINARY
-2.5
40
10
Temperature (ºC)
+25ºC
60
(V
(V
V
V
DS
GS
GS
-2.0
DS
20
=5V)
=-5V)
80
(V)
(V)
-40ºC
100
-1.5
30
120
C
C
ISS
OSS
-1.0
140
40
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
300
250
200
150
100
50
30
27
24
21
18
15
12
0
0
9
6
3
0
0.00
-40
0
Transconductance vs. Drain Current
On-Resistance vs. Drain Current
10
0.04
20
V
GS(off)
0
+125ºC
(V
30
DS
Temperature (ºC)
0.08
=10V, I
vs. Temperature
(V
40
(V
+25ºC
I
DS
D
GS
I
D
40
=10V)
50
(mA)
=0V)
(A)
D
0.12
=1mA)
-55ºC
60
70
80
CPC3720
0.16
80 90
120
0.2
100
3