IXTX200N10L2 IXYS, IXTX200N10L2 Datasheet - Page 4

• Manufacturer Part Number: IXTX200N10L2
• Manufacturer: IXYS

Specifications of IXTX200N10L2

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.011
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 540
• Trr, Typ, (ns): 245
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
100
320
280
240
200
160
120
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
f
4.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
= 1 MHz
5
0.5
4.5
10
0.6
Fig. 7. Input Admittance
5.0
T
Fig. 11. Capacitance
J
0.7
15
= 125ºC
T
V
V
J
GS
SD
= 125ºC
5.5
0.8
V
- 40ºC
- Volts
- Volts
DS
25ºC
20
- Volts
0.9
6.0
T
J
25
1.0
= 25ºC
C iss
C oss
C rss
6.5
1.1
30
7.0
1.2
35
7.5
1.3
1.4
8.0
40
0.200
1.000
0.100
0.010
0.001
140
120
100
80
60
40
20
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
20
DS
Fig. 12. Maximum Transient Thermal Impedance
Fig. 12. Maximum Transient Thermal Impedance
= 100A
= 10mA
100
= 50V
0.0001
40
200
60
Fig. 8. Transconductance
0.001
Q
Fig. 10. Gate Charge
80
Pulse Width - Seconds
G
300
I
- NanoCoulombs
D
- Amperes
100
ggg
0.01
400
120
IXTK200N10L2
IXTX200N10L2
500
140
0.1
T
J
= - 40ºC
160
600
180
25ºC
1
125ºC
700
200
10
220
800