IXTH80N20L IXYS, IXTH80N20L Datasheet - Page 4

• Manufacturer Part Number: IXTH80N20L
• Description: Standard Linear Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTH80N20L

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.032
• Ciss, Typ, (pf): 6160
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 250
• Pd, (w): 520
• Rthjc, Max, (k/w): 0.24
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
100
240
200
160
120
90
80
70
60
50
40
30
20
10
80
40
0
0
3.0
0.4
0
f
0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.6
4.0
T
10
J
0.7
= 125ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.8
4.5
15
V
V
V
DS
GS
SD
0.9
T
- Volts
- Volts
- Volts
J
= 125ºC
5.0
20
- 40ºC
T
25ºC
1.0
J
C iss
C oss
= 25ºC
C rss
5.5
25
1.1
1.2
30
6.0
1.3
6.5
35
1.4
1.5
7.0
40
0.001
0.01
0.1
60
50
40
30
20
10
10
0.00001
0
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
10
= 40A
= 10mA
20
= 100V
0.0001
20
40
Fig. 8. Transconductance
30
60
0.001
Fig. 10. Gate Charge
Q
T
Pulse Width - Seconds
G
J
= - 40ºC
I
- NanoCoulombs
40
D
80
- Amperes
0.01
25ºC
100
50
125ºC
120
60
0.1
IXTH80N20L
IXTT80N20L
140
70
160
80
1
180
90
100
200
10