IXTA15N50L2 IXYS, IXTA15N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTA15N50L2
• Manufacturer: IXYS

Specifications of IXTA15N50L2

• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.480
• Ciss, Typ, (pf): 4080
• Qg, Typ, (nc): 123
• Trr, Typ, (ns): 570
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
18
16
14
12
10
45
40
35
30
25
20
15
10
10
8
6
4
2
0
5
0
3.0
0.5
0
f
3.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
4.0
0.6
10
4.5
T
J
= 125ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
5.0
15
0.7
V
V
DS
V
5.5
GS
SD
- Volts
- Volts
- Volts
20
6.0
T
J
= 125ºC
0.8
- 40ºC
25ºC
6.5
25
T
C iss
C oss
C rss
7.0
J
= 25ºC
30
0.9
7.5
35
8.0
8.5
40
1
0.01
0.1
12
10
16
14
12
10
0.0001
1
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
2
= 7.5A
= 10mA
20
= 250V
0.001
IXTA15N50L2 IXTP15N50L2
4
40
Fig. 8. Transconductance
6
60
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
0.01
I
D
G
8
- Amperes
- NanoCoulombs
80
10
100
0.1
12
IXTH15N50L2
120
T
J
14
= - 40ºC
140
16
1
125ºC
25ºC
160
18
180
10
20