IXTH300N04T2 IXYS, IXTH300N04T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH300N04T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTH300N04T2

• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 300
• Rds(on), Max, Tj=25°c, (?): 0.0025
• Ciss, Typ, (pf): 10700
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 53
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
320
280
240
200
160
120
100
180
160
140
120
100
80
40
80
60
40
20
0
0
0.3
3.0
0
f
0.4
= 1 MHz
5
3.5
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
4.0
J
= 150ºC
T
Intrinsic Diode
15
J
V
0.7
= 150ºC
GS
V
V
- 40ºC
25ºC
SD
DS
- Volts
4.5
0.8
- Volts
20
- Volts
0.9
T
25
J
5.0
C oss
= 25ºC
C iss
C rss
1.0
30
1.1
5.5
35
1.2
6.0
1.3
40
1,000
100
160
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Current Limit
R
DS(
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
J
C
D
G
DS
on
= 175ºC
20
= 25ºC
= 150A
= 10mA
20
)
= 20V
Limit
40
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
60
Q
G
60
IXTH300N04T2
I
- NanoCoulombs
D
V
80
- Amperes
DS
10
- Volts
80
100
120
100
T
J
= - 40ºC
DC
IXYS REF: T_300N04T2(V6)12-15-08-B
140
120
25ºC
25µs
100µs
1ms
10ms
100ms
150ºC
160
140
180
100