IXTH420N04T2 IXYS, IXTH420N04T2 Datasheet

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IXTH420N04T2

Manufacturer Part Number
IXTH420N04T2
Description
TrenchT2 MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTH420N04T2

Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
420
Rds(on), Max, Tj=25°c, (?)
0.002
Ciss, Typ, (pf)
19700
Qg, Typ, (nc)
315
Trr, Typ, (ns)
74
Pd, (w)
935
Rthjc, Max, (k/w)
0.16
Package Style
TO-247
TrenchT2
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
TM
GS
DSS
Power
, I
D
, V
D
D
= 250μA
= 250μA
= 100A, Note 1
GS
DS
= 0V
= 0V
GS
= 1MΩ
Advance Technical Information
T
J
= 150°C
IXTH420N04T2
JM
Characteristic Values
Min.
1.5
-55 ... +175
-55 ... +175
40
Maximum Ratings
1.13 / 10
1050
± 20
Typ.
420
160
200
960
935
175
300
260
40
40
1.6
6
Max.
±200
Nm/lb.in.
3.5
300 μA
2.0 mΩ
10 μA
mJ
°C
°C
°C
°C
°C
nA
W
V
V
V
A
A
A
A
V
V
g
V
I
R
TO-247
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Diode
International Standard Package
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Low R
Easy to Mount
Space Savings
High Power Density
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
DS(on)
DSS
G
D
DS(on)
S
= 40V
= 420A
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
2.0mΩ Ω Ω Ω Ω
= Drain
(TAB)
DS100170(7/09)

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IXTH420N04T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH420N04T2 Maximum Ratings 40 = 1MΩ ± 20 420 160 1050 JM 200 960 935 -55 ... +175 175 -55 ... +175 300 260 1. Characteristic Values Min ...

Page 2

... I = 0.5 • DSS D D25 73 0.21 Characteristic Values Min. Typ 2.7 100 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH420N04T2 TO-247 (IXTH) Outline Max Ω Terminals Gate 3 - Source ns Dim. Millimeter nC Min ...

Page 3

... Value vs. D 180 160 140 T = 175ºC J 120 100 25º 200 250 300 350 IXTH420N04T2 Fig. 2. Extended Output Characteristics @ 25º 10V 0.0 1.0 2.0 3.0 4 Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V -50 - ...

Page 4

... V DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 3.5 4.0 4 25ºC J 0.8 0.9 1.0 1.1 1.2 10,000 C iss 1,000 C oss C rss Volts IXTH420N04T2 Fig. 8. Transconductance 240 200 160 120 100 120 I - Amperes D Fig. 10. Gate Charge 20V 9 DS ...

Page 5

... IXTH420N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 2Ω 10V 20V 125º 25º 100 120 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTH420N04T2 0 IXYS REF: T_420N04T2(V8)7-15-09 ...

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