IXTY90N055T2 IXYS, IXTY90N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTY90N055T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of IXTY90N055T2

• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.0084
• Ciss, Typ, (pf): 2770
• Qg, Typ, (nc): 42
• Trr, Typ, (ns): 37
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 1.00
• Package Style: TO-252

IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.
10,000
1,000
270
240
210
180
150
120
100
90
60
30
90
80
70
60
50
40
30
20
10
10
0
0
0.4
3.0
0
f
0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.6
4.0
10
0.7
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
0.8
4.5
J
15
T
= 150ºC
J
= 150ºC
V
- 40ºC
V
V
0.9
25ºC
SD
GS
DS
5.0
- Volts
- Volts
20
- Volts
1.0
T
J
= 25ºC
5.5
25
1.1
C iss
C oss
C rss
1.2
6.0
30
1.3
6.5
35
1.4
7.0
1.5
40
1,000
100
10
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
R
T
T
Single Pulse
J
C
DS(on)
V
I
I
= 175ºC
10
D
G
DS
= 25ºC
5
= 25A
= 10mA
= 30V
Fig. 12. Forward-Bias Safe Operating Area
Limit
IXTY90N055T2 IXTA90N055T2
20
10
30
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
40
G
I
D
- NanoCoulombs
V
20
- Amperes
DS
50
10
- Volts
25
60
IXTP90N055T2
30
70
T
J
= - 40ºC
35
80
150ºC
25ºC
40
90
25µs
100µs
1ms
10ms
100ms
100
100
45