MMIX1F520N075T2 IXYS, MMIX1F520N075T2 Datasheet

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MMIX1F520N075T2

Manufacturer Part Number
MMIX1F520N075T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F520N075T2

Vdss, Max, (v)
75
Id(cont), Tc=25°c, (a)
500
Rds(on), Max, Tj=25°c, (?)
0.0016
Ciss, Typ, (pf)
41000
Qg, Typ, (nc)
545
Trr, Typ, (ns)
-
Trr, Max, (ns)
150
Pd, (w)
830
Rthjc, Max, (k/w)
0.18
Package Style
SMPD
TrenchT2
HiperFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GigaMOS
GS
DSS
, I
D
, V
D
D
= 3mA
= 8mA
= 100A, Note 1
GS
DS
= 0V
= 0V
GS
TM
= 1MΩ
Preliminary Technical Information
T
J
= 150°C
MMIX1F520N075T2
JM
50..200 / 11..45
Min.
2.5
75
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1700
2500
500
±20
±30
200
830
175
300
260
Typ.
75
75
8
3
±200 nA
Max.
5.0
2.0 mA
1.6 mΩ
25
N/lb.
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
G = Gate
S = Source
Features
Advantages
Applications
D25
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
175°C Operating Temperature
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Capability
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
Isolated Tab
S
=
=
≤ ≤ ≤ ≤ ≤
G
DS(on)
D = Drain
75V
500A
1.6mΩ Ω Ω Ω Ω
DS100269A(08/11)
(2500V~)
D
D

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MMIX1F520N075T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information MMIX1F520N075T2 TM Maximum Ratings 75 = 1MΩ ±20 ±30 500 1700 JM 200 3 830 -55 ... +175 175 -55 ... +175 300 260 2500 50..200 / 11..45 ...

Page 2

... I = 260A 177 DSS D 135 0.05 Characteristic Values Min. Typ 357 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F520N075T2 Max Ω 0.18 °C/W °C/W Max. 520 A 1600 A 1.25 V 150 6,404,065 B1 6,683,344 ...

Page 3

... IXYS CORPORATION, All Rights Reserved = 25ºC J 0.7 0.8 0.9 1 1.1 1.2 vs. Junction Temperature 75 100 125 150 175 250 225 200 175 150 125 100 75 100 125 150 175 MMIX1F520N075T2 Fig. 2. Output Characteristics @ T 400 V = 15V GS 10V 350 8V 7V 300 250 200 150 100 0.1 0.2 0.3 0.4 0.5 0.6 0 Volts DS Fig ...

Page 4

... DC 0.0001 100 0.00001 MMIX1F520N075T2 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 150ºC J 0.4 0.5 0.6 0 Volts SD Fig. 10. Capacitance C iss C oss C rss MHz Volts DS Fig ...

Page 5

... V = 10V 37.5V DS 140 400 120 300 100 T = 125ºC J 200 80 100 60 40 140 160 180 200 MMIX1F520N075T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 37. 125º 25º 100 120 140 ...

Page 6

... Package Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1F520N075T2 PIN Gate 5-12 = Source 13-24 = Drain ...

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