IXTP60N10TM IXYS, IXTP60N10TM Datasheet - Page 5

• Manufacturer Part Number: IXTP60N10TM
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTP60N10TM

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 33
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 60
• Rthjc, Max, (k/w): 2.5
• Package Style: OVERMOLEDED

© 2008 IXYS CORPORATION, All rights reserved
170
150
130
110
40
39
38
37
36
35
34
33
32
90
70
50
30
60
55
50
45
40
35
30
25
10
15
25
Fig. 17. Resistive Turn-off Switching Times
Fig. 15. Resistive Turn-on Switching Times
10A < I
T
V
t
J
DS
12
r
= 125ºC, V
35
20
I
= 50V
Fig. 13. Resistive Turn-on Rise Time
D
D
= 10A
14
< 30A
45
25
vs. Junction Temperature
t
d(on)
vs. Gate Resistance
GS
16
vs. Drain Current
55
= 10V
T
I
J
- - - -
30
D
I
R
T
- Degrees Centigrade
D
18
I
- Amperes
G
J
D
= 30A
65
= 125ºC
- Ohms
= 30A
35
20
75
t
R
V
22
f
G
DS
T
40
I
J
= 15Ω, V
D
85
= 50V
= 25ºC
= 10A
24
45
95
t
GS
d(off)
26
R
V
V
= 10V
GS
DS
G
105
= 15Ω
50
- - - -
= 10V
= 50V
28
115
55
30
80
70
60
50
40
30
20
10
67
63
59
55
51
47
43
39
35
125
120
110
100
39
38
37
36
35
34
33
90
80
70
60
50
40
30
60
55
50
45
40
35
30
25
25
15
10
Fig. 18. Resistive Turn-off Switching Times
Fig. 16. Resistive Turn-off Switching Times
t
R
V
t
T
V
R
V
V
f
G
DS
35
J
f
DS
GS
DS
G
= 15Ω, V
= 125ºC, V
20
12
= 15Ω
= 50V
= 50V
Fig. 14. Resistive Turn-on Rise Time
= 10V
= 50V
45
vs. Junction Temperature
14
25
t
T
d(off)
GS
J
vs. Gate Resistance
t
55
d(off)
GS
- Degrees Centigrade
= 10V
16
= 10V
- - - -
30
vs. Drain Current
R
- - - -
65
G
I
D
- Ohms
18
- Amperes
35
75
20
IXTP60N10TM
85
40
I
D
I
22
D
= 10A, 30A
T
T
I
95
= 10A
D
J
J
IXYS REF: T_60N10T(2V)8-07-08-A
= 25ºC
= 125ºC
= 30A
45
24
105
50
26
115
28
55
125
185
170
155
140
125
110
95
80
65
50
64
60
56
52
48
44
40
30