IXFR230N20T IXYS, IXFR230N20T Datasheet - Page 4

• Manufacturer Part Number: IXFR230N20T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFR230N20T

• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 156
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 378
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.25
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
100
200
180
160
140
120
100
50
80
60
40
20
0
0
0.0
3.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.2
3.5
10
0.4
4.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
15
= 150ºC
T
V
J
0.6
4.5
GS
= 150ºC
V
V
SD
DS
- Volts
- Volts
20
- Volts
0.8
5.0
25ºC
25
T
J
= 25ºC
C oss
C rss
C iss
1.0
5.5
30
- 40ºC
1.2
6.0
35
40
1.4
6.5
1,000
100
10
280
240
200
160
120
1
80
40
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
RDS(on) Limit
TJ = 175ºC
TC = 25ºC
Single Pulse
V
I
I
20
D
G
40
DS
= 115A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 100V
40
80
120
60
Fig. 8. Transconductance
10
Fig. 10. Gate Charge
Q
T
160
J
80
G
= - 40ºC
V
I
- NanoCoulombs
D
DS
- Amperes
- Volts
100
200
IXFR230N20T
25ºC
150ºC
240
120
100
1ms
280
140
25µs
100µs
320
160
360
180
1,000
400
200