IXTA50N28T IXYS, IXTA50N28T Datasheet - Page 4

• Manufacturer Part Number: IXTA50N28T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTA50N28T

• Vdss, Max, (v): 280
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.066
• Ciss, Typ, (pf): 4070
• Qg, Typ, (nc): 87
• Trr, Typ, (ns): 180
• Trr, Max, (ns): -
• Pd, (w): 340
• Rthjc, Max, (k/w): 0.37
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
100
140
120
100
10
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.3
0
3.0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
= 1 MHz
5
3.5
0.5
10
4.0
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
15
T
T
J
J
= 125ºC
= 125ºC
4.5
V
0.7
V
V
- 40ºC
DS
SD
25ºC
GS
20
- Volts
- Volts
- Volts
0.8
5.0
25
T
0.9
J
= 25ºC
5.5
30
1.0
C oss
C iss
C rss
6.0
35
1.1
1.2
6.5
40
1000
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
R
T
T
Single Pulse
DS(on)
V
I
I
10
J
C
D
G
DS
= 150ºC
= 25ºC
= 25A
= 10mA
10
= 140V
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
20
30
IXTA50N28T IXTP50N28T
Fig. 8. Transconductance
40
30
Fig. 10. Gate Charge
Q
G
50
I
- NanoCoulombs
D
V
40
- Amperes
DS
100
60
- Volts
50
70
1ms
IXTQ50N28T
80
60
125ºC
T
J
25ºC
= - 40ºC
90
25µs
100µs
70
100
80
110
1,000
120
90