MMIX1F160N30T IXYS, MMIX1F160N30T Datasheet - Page 5

• Manufacturer Part Number: MMIX1F160N30T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of MMIX1F160N30T

• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.020
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 570
• Rthjc, Max, (k/w): 0.22
• Package Style: MMIX

© 2012 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
200
180
160
140
120
100
350
300
250
200
150
100
100
80
60
40
20
50
0
0
3.0
0.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.4
5
0.2
3.8
10
0.4
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.2
15
T
0.6
J
V
V
= 125ºC
V
GS
SD
DS
4.6
T
20
- Volts
- Volts
- Volts
J
= 125ºC
- 40ºC
25ºC
0.8
5.0
25
T
C iss
C oss
C rss
J
= 25ºC
1.0
5.4
30
1.2
5.8
35
6.2
1.4
40
1,000
100
300
250
200
150
100
10
10
50
1
9
8
7
6
5
4
3
2
1
0
0
1
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
R
DS
= 150ºC
20
= 25ºC
DS(
= 80A
= 10mA
= 150V
50
on
Fig. 12. Forward-Bias Safe Operating Area
)
Limit
40
100
Fig. 8. Transconductance
60
10
Fig. 10. Gate Charge
MMIX1F160N30T
Q
80
G
150
I
- NanoCoulombs
V
D
DS
- Amperes
100
- Volts
200
T
J
120
= - 40ºC
100
25ºC
125ºC
140
250
160
300
1ms
25µs
100µs
180
1000
200
350