IXTT68P20T IXYS, IXTT68P20T Datasheet - Page 4

• Manufacturer Part Number: IXTT68P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT68P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -68
• Rds(on), Max, Tj=25°c, (?): 0.055
• Ciss, Typ, (pf): 33400
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): 245
• Trr, Max, (ns): -
• Pd, (w): 568
• Rthjc, Max, (k/w): 0.22
• Package Style: TO-268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-220
-200
-180
-160
-140
-120
-100
-110
-100
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
-80
-60
-40
-20
0
0
-0.3
-3
0
-0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
-5
= 1 MHz
-3.5
-0.5
-10
-0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
-15
T
-0.7
J
-4
= 125ºC
V
V
V
GS
SD
DS
-0.8
-20
- Volts
- Volts
- Volts
-4.5
-0.9
T
J
-25
= 125ºC
T
- 40ºC
J
25ºC
C iss
C oss
C rss
-1.0
= 25ºC
-30
-1.1
-5
-35
-1.2
-5.5
-1.3
-40
-
1000
-
180
160
140
120
100
100
-
-10
80
60
40
20
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
0
0
1
-
0
0
1
V
I
I
T
T
Single Pulse
D
G
-10
DS
J
C
R
= - 34A
= -1mA
= 150ºC
= 25ºC
DS(on)
= -100V
50
Fig. 12. Forward-Bias Safe Operating Area
-20
Limit
100
-30
Fig. 8. Transconductance
-
Fig. 10. Gate Charge
10
-40
150
Q
G
- NanoCoulombs
I
D
-50
- Amperes
V
DS
200
- Volts
-60
250
-70
T
-
J
100
IXTT68P20T
IXTH68P20T
= - 40ºC
DC
-80
300
25ºC
125ºC
25µs
100µs
1ms
10ms
100ms
-90
350
-100
-
400
1000
-110