IXTP15P15T IXYS, IXTP15P15T Datasheet - Page 4

• Manufacturer Part Number: IXTP15P15T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTP15P15T

• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -15
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 3650
• Qg, Typ, (nc): 48
• Trr, Typ, (ns): 116
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 0.83
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
-45
-40
-35
-30
-25
-20
-15
-10
-40
-35
-30
-25
-20
-15
-10
10
-5
-5
0
0
-0.3
-3.0
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-0.4
-3.5
-5
-4.0
-0.5
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-0.6
-4.5
-15
V
V
T
V
J
GS
SD
DS
= 125ºC
-0.7
-5.0
-20
- Volts
- Volts
T
- Volts
J
= 125ºC
- 40ºC
25ºC
-0.8
-5.5
-25
C iss
C oss
C rss
-6.0
-0.9
-30
T
J
= 25ºC
-6.5
-1.0
-35
-7.0
-1.1
-40
-
-
100
-
0.1
-10
32
28
24
20
16
12
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
8
4
0
0
-
1
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
-4
= 25ºC
5
= - 7.5A
= -1mA
= - 75V
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
10
-8
Limit
IXTY15P15T IXTA15P15T
Fig. 8. Transconductance
-12
15
-
10
Fig. 10. Gate Charge
Q
-16
20
G
I
- NanoCoulombs
D
V
- Amperes
DS
-20
25
- Volts
-24
30
T
-
J
100
IXTP15P15T
= - 40ºC
DC
-28
35
25ºC
125ºC
25µs
100µs
1ms
10ms
100ms
-32
40
-36
45
-
1,000
-40
50