IXTY10P15T IXYS, IXTY10P15T Datasheet - Page 4

• Manufacturer Part Number: IXTY10P15T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTY10P15T

• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 2210
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): 120
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-252

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
-22
-20
-18
-16
-14
-12
-10
100
-30
-25
-20
-15
-10
-8
-6
-4
-2
10
-5
0
0
-3.5
-0.3
0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-0.4
f
-5
-4.0
= 1 MHz
-0.5
-10
-4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
-0.6
-15
-5.0
V
V
T
GS
V
SD
J
DS
= 125ºC
-0.7
- Volts
- Volts
-20
- Volts
T
J
-5.5
= 125ºC
- 40ºC
25ºC
-0.8
-25
C iss
C oss
C rss
-6.0
-0.9
-30
T
J
= 25ºC
-6.5
-1.0
-35
-7.0
-1.1
-40
-
-
-10
100
-
0.1
20
18
16
14
12
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
6
4
2
0
0
1
-
0
0
1
V
I
I
R
T
T
Single Pulse
D
G
DS
J
C
DS(on)
-2
= - 5A
= -1mA
= 150ºC
= 25ºC
4
= - 75V
Fig. 12. Forward-Bias Safe Operating Area
Limit
-4
8
-6
IXTY10P15T IXTA10P15T
Fig. 8. Transconductance
-
12
10
Fig. 10. Gate Charge
-8
Q
G
- NanoCoulombs
I
16
D
-10
V
- Amperes
DS
- Volts
-12
20
-14
-
100
24
IXTP10P15T
DC
T
J
= - 40ºC
-16
25µs
100µs
1ms
10ms
100ms
28
25ºC
125ºC
-18
32
-20
-
1,000
-22
36