IXTK210P10T IXYS, IXTK210P10T Datasheet - Page 5

• Manufacturer Part Number: IXTK210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTK210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -210
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264

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120
110
100
350
300
250
200
150
100
90
80
70
60
50
40
90
80
70
50
0
-50
25
1
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
T
V
t
-55
R
V
J
r
DS
35
G
DS
= 125ºC, V
2
= 1Ω, V
= - 50V
= - 50V
Fig. 13. Resistive Turn-on Rise Time vs.
-60
45
3
GS
GS
= -10V
t
-65
d(on)
= -10V
55
T
4
J
Junction Temperature
Gate Resistance
T
- - - -
= 25ºC
T
J
Drain Current
-70
J
= 125ºC
I
- Degrees Centigrade
D
65
R
- Amperes
5
G
I
- Ohms
-75
I
D
I
D
D
= -100A
= -100A
75
= - 50A
6
-80
R
V
t
f
DS
G
85
I
= 1Ω, V
D
= - 50V
7
-85
= - 50A
95
GS
8
-90
= -10V
t
d(off)
105
-95
9
- - - -
115
-100
10
300
260
220
180
140
100
700
600
500
400
300
200
100
0
125
500
400
300
200
100
120
110
100
90
85
80
75
70
65
60
55
50
45
40
90
80
0
25
-50
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
T
V
t
R
V
t
f
J
f
35
DS
R
V
G
DS
-55
= 125ºC, V
DS
G
2
= 1Ω, V
= - 50V
= - 50V
= 1Ω, V
= - 50V
Fig. 14. Resistive Turn-on Rise Time vs.
45
-60
GS
3
GS
GS
= -10V
t
t
= -10V
d(off)
d(off)
55
= -10V
Junction Temperature
-65
T
4
- - - -
- - - -
I
J
Gate Resistance
D
- Degrees Centigrade
= - 50A
65
I
-70
Drain Current
D
R
5
I
= - 50A
G
D
T
- Ohms
- Amperes
75
J
= 125ºC
T
J
-75
= 25ºC
6
I
85
D
= -100A
-80
7
95
IXTK210P10T
IXTX210P10T
-85
8
105
I
D
= -100A
-90
9
115
-95
125
10
1000
800
600
400
200
0
320
300
280
260
240
220
200
180
160
140
120
-100