IXTN210P10T IXYS, IXTN210P10T Datasheet - Page 3

• Manufacturer Part Number: IXTN210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTN210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -210
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.15
• Package Style: SOT-227

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-220
-200
-180
-160
-140
-120
-100
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-80
-60
-40
-20
0
0
0
0
0
V
GS
= -10V
-0.2
-50
Fig. 5. R
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
-0.4
-100
-0.4
DS(on)
-0.8
Normalized to I
Drain Current
-150
-0.6
I
D
V
V
- Amperes
DS
DS
T
T
J
J
-1.2
- Volts
= 125ºC
= 25ºC
- Volts
-200
-0.8
V
V
GS
GS
= -10V
= -10V
D
-1.6
- 8V
- 7V
- 8V
- 7V
= -105A vs.
-250
-1
J
J
- 6V
- 4V
- 5V
= 125ºC
= 25ºC
- 5V
- 4V
- 6V
-2
-300
-1.2
-350
-1.4
-2.4
-220
-200
-180
-160
-140
-120
-100
-400
-350
-300
-250
-200
-150
-100
-80
-60
-40
-20
-50
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
V
GS
GS
-1
= -10V
External Lead Current Limit
-25
= -10V
-25
Fig. 4. R
-2
Fig. 6. Maximum Drain Current vs.
0
- 7V
0
DS(on)
-3
Junction Temperature
- 6V
- 5V
T
- 4V
Case Temperature
J
25
T
25
- Degrees Centigrade
J
Normalized to I
-4
- Degrees Centigrade
V
DS
50
50
-5
- Volts
IXTN210P10T
-6
I
D
75
75
= - 210A
D
= -105A vs.
-7
100
100
I
-8
D
J
= -105A
= 25ºC
125
125
-9
-10
150
150