IXXR100N60B3H1 IXYS, IXXR100N60B3H1 Datasheet - Page 4

• Manufacturer Part Number: IXXR100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXR100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 145
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 68
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.31
• If, Tc = 90°c, Diode (a): 54
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 0.62
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
80
70
60
50
40
30
20
10
10
10
0
1
0
0
1
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 150ºC
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
80
I
V
C
CE
- Amperes
V
DS
100
20
- Volts
- Volts
120
25
100
C oes
C res
C ies
140
T
30
J
= - 40ºC
160
DC
25ºC
150ºC
35
180
100µs
1ms
10ms
100ms
25µs
1000
200
40
0.001
0.01
220
200
180
160
140
120
100
0.1
16
14
12
10
80
60
40
20
0.00001
0
8
6
4
2
0
1
100
0
T
R
dv / dt < 10V / ns
V
I
I
150
J
C
G
G
CE
Fig. 12. Maximum Transient Thermal Impedance
= 150ºC
= 70A
= 10mA
= 2
= 300V
20
0.0001
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
250
40
0.001
Fig. 8. Gate Charge
300
Pulse Width - Seconds
IXXR100N60B3H1
Q
G
60
- NanoCoulombs
V
350
CE
0.01
- Volts
80
400
450
100
0.1
500
120
550
1
600
140
650
10