IXXH75N60B3 IXYS, IXXH75N60B3 Datasheet - Page 3

no-image

IXXH75N60B3

Manufacturer Part Number
IXXH75N60B3
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXH75N60B3

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
160
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
75
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.85
Tfi, Typ, Tj = 25°c, Igbt, (ns)
125
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.2
Rthjc, Max, Igbt (c/w)
0.20
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXH75N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2011 IXYS CORPORATION, All Rights Reserved
140
120
100
140
120
100
80
60
40
20
80
60
40
20
8
7
6
5
4
3
2
1
0
0
9
0
0
0.5
Fig. 3. Output Characteristics @ T
0.5
Fig. 1. Output Characteristics @ T
10
Fig. 5. Collector-to-Emitter Voltage vs.
37.5A
1
1
Gate-to-Emitter Voltage
1.5
11
75A
V
1.5
CE
V
V
CE
2
GE
- Volts
- Volts
12
- Volts
V
2.5
GE
V
2
GE
= 15V
14V
13V
= 15V
14V
I
13
C
3
= 150A
2.5
J
J
= 150ºC
= 25ºC
3.5
T
14
J
= 25ºC
3
4
13V
12V
11V
10V
9V
8V
7V
12V
11V
10V
9V
8V
6V
4.5
3.5
15
300
250
200
150
100
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
= 15V
5
5
0
Fig. 4. Dependence of V
V
GE
6
= 15V
Fig. 6. Input Admittance
10
Junction Temperature
25
T
J
14V
- Degrees Centigrade
7
V
CE
50
V
T
15
J
GE
- Volts
I
C
= 150ºC
IXXH75N60B3
I
8
- Volts
= 150A
13V
I
C
25ºC
C
= 75A
75
= 37.5A
20
9
12V
CE(sat)
100
11V
10
on
125
25
- 40ºC
J
= 25ºC
10V
11
150
9V
30
7V
175
12

Related parts for IXXH75N60B3