IXXN100N60B3H1 IXYS, IXXN100N60B3H1 Datasheet - Page 7

• Manufacturer Part Number: IXXN100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXN100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 170
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 50
• Rthjc, Max, Diode (k/w): 0.42
• Package Style: SOT-227

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Fig. 26 Maximum transient thermal impedance junction to case (for diode)
1.00
0.10
0.01
Fig. 27. Maximum Transient Thermal Impedance
1.00
0.10
0.01
Fig. 25. Dynamic Parameters Q
0.0001
Fig. 22. Forward Current I
0.0001
Fig. 26. Maximum Transient Thermal Impedance
Versus T
VJ
0.001
0.001
F
Versus V
r
, I
RM
F
Fig. 23. Reverse Recovery Charge Q
Versus -di
Fig. 26. Recovery Time t
0.01
0.01
Pulse Width [ms]
-di
F
/dt
Pulse Width Seconds
F
/dt
rr
Versus
0.1
0.1
r
Fig. 24. Peak Reverse Current I
IXXN100N60B3H1
1
Versus -di
1
F
/dt
IXYS REF: IXX_100N60B3(7D)12-01-11-B
10
RM
10