IXXX100N60B3H1 IXYS, IXXX100N60B3H1 Datasheet - Page 3

• Manufacturer Part Number: IXXX100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXX100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 200
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 65
• Rthjc, Max, Diode (k/w): 0.30
• Package Style: PLUS247

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140
120
100
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
8
0
Fig. 3. Output Characteristics @ T
0.5
0.4
Fig. 1. Output Characteristics @ T
9
35A
Fig. 5. Collector-to-Emitter Voltage vs.
0.8
10
1
Gate-to-Emitter Voltage
70A
V
1.5
1.2
V
CE
11
CE
V
I
GE
- Volts
C
- Volts
= 140A
- Volts
V
V
GE
GE
1.6
= 15V
12
2
= 15V
13V
12V
13V
12V
2.5
13
2
J
J
= 150ºC
= 25ºC
T
J
2.4
14
3
= 25ºC
11V
10V
9V
8V
7V
5V
10V
11V
9V
8V
7V
6V
3.5
2.8
15
350
300
250
200
150
100
180
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
-50
0
4
V
Fig. 2. Extended Output Characteristics @ T
V
GE
GE
-25
= 15V
2
= 15V
5
4
0
14V
Fig. 4. Dependence of V
6
13V
Fig. 6. Input Admittance
6
Junction Temperature
25
T
J
- Degrees Centigrade
8
V
CE
7
50
V
GE
- Volts
10
- Volts
I
IXXK100N60B3H1
IXXX100N60B3H1
C
I
= 140A
I
75
C
C
= 70A
8
= 35A
12
12V
T
J
= 150ºC
CE(sat)
100
- 40ºC
25ºC
14
9
on
125
16
J
= 25ºC
10
150
11V
18
10V
9V
8V
7V
175
11
20