IXXK200N60C3 IXYS, IXXK200N60C3 Datasheet - Page 5

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IXXK200N60C3

Manufacturer Part Number
IXXK200N60C3
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXK200N60C3

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
340
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
200
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.1
Tfi, Typ, Tj = 25°c, Igbt, (ns)
80
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.1
Rthjc, Max, Igbt (c/w)
0.092
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
© 2011 IXYS CORPORATION, All Rights Reserved
3.5
3.0
2.5
2.0
1.5
1.0
0.5
160
140
120
100
2.5
1.5
0.5
80
60
40
20
3
2
1
0
0
1
25
50
E
T
V
Fig. 17. Inductive Turn-off Switching Times vs.
E
R
V
J
I
I
off
CE
Fig. 13. Inductive Switching Energy Loss vs.
Fig. 15. Inductive Switching Energy Loss vs.
C
off
CE
C
G
= 150ºC , V
55
2
= 100A
= 360V
= 50A
= 1
= 360V
Ω ,
60
50
T
V
J
3
GE
= 150ºC
GE
E
= 15V
E
= 15V
on
65
on
Junction Temperature
T
J
- - - -
- - - -
4
- Degrees Centigrade
Collector Current
Gate Resistance
70
R
75
I
C
G
- Amperes
5
- Ohms
T
J
= 25ºC
75
R
V
t
6
f i
G
CE
80
100
= 1
= 360V
I
I
C
C
= 50A
7
, V
= 100A
85
GE
= 15V
t
d(off)
90
8
125
- - - -
95
9
100
150
10
190
180
170
160
150
140
130
120
110
7
6
5
4
3
2
1
6
5
4
3
2
1
0
140
120
100
150
130
110
2.5
1.5
0.5
80
60
40
20
90
70
50
30
10
0
2
1
0
25
50
1
Fig. 16. Inductive Turn-off Switching Times vs.
Fig. 18. Inductive Turn-off Switching Times vs.
E
R
V
T
V
R
V
t
t
off
CE
G
J
f i
Fig. 14. Inductive Switching Energy Loss vs.
f i
CE
G
CE
55
= 150ºC, V
= 1
2
= 1
= 360V
= 360V
= 360V
Ω ,
50
, V
60
V
3
GE
GE
GE
I
t
= 15V
= 15V
t
d(on)
E
C
I
d(off)
= 15V
Junction Temperature
65
C
on
= 50A
I
T
= 50A
4
C
J
- - - -
Collector Current
- - - -
Gate Resistance
= 100A
- - - -
- Degrees Centigrade
I
75
C
70
- Amperes
R
5
G
I
C
- Ohms
= 100A
75
6
100
T
80
J
= 150ºC
IXXK200N60C3
IXXX200N60C3
7
85
T
J
= 25ºC
8
125
90
9
95
150
10
100
450
400
350
300
250
200
150
100
180
170
160
150
140
130
120
110
5
4
3
2
1
0

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