IXXX200N60B3 IXYS, IXXX200N60B3 Datasheet - Page 6
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IXXX200N60B3
Manufacturer Part Number
IXXX200N60B3
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXX200N60B3.pdf
(6 pages)
Specifications of IXXX200N60B3
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
380
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
200
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
3.45
Rthjc, Max, Igbt (c/w)
0.092
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
PLUS247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
150
130
110
180
160
140
120
100
90
70
50
30
10
80
60
40
20
25
1
Fig. 21. Inductive Turn-on Switching Times vs.
T
V
Fig. 19. Inductive Turn-on Switching Times vs.
t
r i
J
CE
= 150ºC, V
2
= 360V
50
3
GE
t
I
d(on)
= 15V
Junction Temperature
C
I
= 100A
C
T
4
J
= 50A
- - - -
Gate Resistance
- Degrees Centigrade
75
R
G
5
- Ohms
I
C
6
= 100A
100
t
R
V
r i
CE
G
= 1
= 360V
7
Ω
, V
GE
I
8
125
C
= 15V
t
= 50A
d(on)
- - - -
9
150
10
52
50
48
46
44
42
40
38
115
105
95
85
75
65
55
45
35
120
100
80
60
40
20
0
50
Fig. 20. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
55
= 1
= 360V
Ω
, V
60
T
GE
J
= 25ºC
t
= 15V
d(on)
65
Collector Current
- - - -
T
70
J
= 150ºC
I
C
75
- Amperes
80
IXXK200N60B3
IXXX200N60B3
85
90
IXYS REF: IXX_200N60B3(91)8-18-11
95
100
50
48
46
44
42
40
38