IXYH60N90C3 IXYS, IXYH60N90C3 Datasheet - Page 4

• Manufacturer Part Number: IXYH60N90C3
• Description: XPT 900V
• Manufacturer: IXYS

Specifications of IXYH60N90C3

• Vces, (v): 900
• Ic25, Tc = 25°c, Igbt, (a): 140
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 60
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 88
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.15
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
70
60
50
40
30
20
10
10
0.1
0.00001
0
1
0
0
f
= 1 MHz
20
5
40
10
60
Fig. 7. Transconductance
Fig. 9. Capacitance
0.0001
80
15
I
V
C
100
CE
- Amperes
- Volts
20
120
25
140
C oes
C ies
C res
160
0.001
Fig. 11. Maximum Transient Thermal Impedance
T
30
J
= - 40ºC
180
25ºC
150ºC
35
200
Pulse Width - Seconds
220
40
0.01
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
10
G
C
G
CE
= 150ºC
200
= 3
= 60A
= 10mA
= 450V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
20
300
0.1
30
400
Fig. 8. Gate Charge
40
Q
G
- NanoCoulombs
V
50
CE
500
- Volts
IXYH60N90C3
60
600
70
1
700
80
800
90
100
900
110
10