IXYH80N90C3 IXYS, IXYH80N90C3 Datasheet - Page 4

• Manufacturer Part Number: IXYH80N90C3
• Description: XPT 900V
• Manufacturer: IXYS

Specifications of IXYH80N90C3

• Vces, (v): 900
• Ic25, Tc = 25°c, Igbt, (a): 165
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 80
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 86
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.5
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
10
80
70
60
50
40
30
20
10
10
0
1
0
1
0
V
f
CE(sat)
T
T
Single Pulse
= 1 MHz
20
J
C
= 175ºC
= 25ºC
Fig. 11. Forward-Bias Safe Operating Area
5
Limit
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
80
15
V
DS
I
V
C
100
- Volts
CE
- Amperes
- Volts
20
120
25
140
100
C oes
C ies
C res
160
30
T
J
= - 40ºC
180
150ºC
25ºC
35
200
1000
220
25µs
100µs
1ms
10ms
DC
40
0.001
0.01
180
160
140
120
100
0.1
16
14
12
10
80
60
40
20
0.00001
8
6
4
2
0
0
1
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
Fig. 12. Maximum Transient Thermal Impedance
CE
= 150ºC
200
= 2
= 80A
= 10mA
= 450V
20
0.0001
Fig. 10. Reverse-Bias Safe Operating Area
Ω
300
40
0.001
400
Fig. 8. Gate Charge
Pulse Width - Seconds
Q
G
60
- NanoCoulombs
V
CE
500
0.01
- Volts
80
600
IXYT80N90C3
IXYH80N90C3
100
0.1
700
120
800
1
140
900
10