IXYK140N90C3 IXYS, IXYK140N90C3 Datasheet

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IXYK140N90C3

Manufacturer Part Number
IXYK140N90C3
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYK140N90C3

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
310
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
140
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
105
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
5.0
Rthjc, Max, Igbt (c/w)
0.092
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
900V XPT
GenX3
High-Speed IGBTs
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C (Chip Capability)
= 110°C
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
=
= 250μA, V
I
C110
CES
IGBTs
, V
, V
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= V
(PLUS247)
= 0V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 1Ω
T
T
J
J
= 150°C
= 150°C
IXYK140N90C3
IXYX140N90C3
20..120 /4.5..27
Min.
950
Characteristic Values
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
2.15
2.85
Typ.
= 280
1630
±20
±30
840
V
140
175
300
260
900
900
310
160
70
CES
10
1
6
±100
1.25 mA
Max.
2.70
Nm/lb.in.
5.5
25
N/lb.
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
A
J
g
g
V
I
V
t
TO-264 (IXYK)
PLUS247 (IXYX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
G
C
E
G
= 900V
= 140A
= 105ns
C
≤ ≤ ≤ ≤ ≤ 2.7V
E
E
Tab = Collector
DS100450A(03/12)
Tab
= Emitter
Tab

Related parts for IXYK140N90C3

IXYK140N90C3 Summary of contents

Page 1

... CES GE = ±20V 0V, V GES 15V, Note 1 C110 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXYK140N90C3 IXYX140N90C3 Maximum Ratings 900 = 1MΩ 900 GE ±20 ±30 310 160 140 840 1Ω 280 G CM ≤ ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYK140N90C3 IXYX140N90C3 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 6 0.092 °C/W ° ...

Page 3

... T = 25ºC 180 J 160 140 120 100 IXYK140N90C3 IXYX140N90C3 Fig. 2. Extended Output Characteristics @ 15V GE 11V 12V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 280A C I ...

Page 4

... C ies 150 100 C oes 50 C res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYK140N90C3 IXYX140N90C3 Fig. 8. Gate Charge V = 450V 140A 10mA G 50 100 150 200 250 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... V = 15V 450V 220 CE 160 200 140 180 120 160 100 140 80 120 100 100 IXYK140N90C3 IXYX140N90C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 450V 150º 25º ...

Page 6

... Ω 15V 450V 100 125 150 IXYK140N90C3 IXYX140N90C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 450V 25ºC, 150º Amperes ...

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