IXYH30N120C3D1 IXYS, IXYH30N120C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXYH30N120C3D1
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH30N120C3D1

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 66
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 30
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 4.0
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 86
• Eoff, Typ, Tj = 125°c, Igbt (mj): 0.90
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.30
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 25
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
25
20
15
10
10
0.1
5
0
0.00001
1
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
30
Fig. 9. Capacitance
15
0.0001
V
I
40
C
CE
- Amperes
- Volts
20
50
25
60
Fig. 11. Maximum Transient Thermal Impedance
30
T
J
70
= - 40ºC
C ies
C oes
C res
125ºC
25ºC
35
0.001
80
Pulse Width - Second
40
90
70
60
50
40
30
20
10
16
14
12
10
8
6
4
2
0
0
200
0
T
R
dv / dt < 10V / ns
J
V
I
I
G
300
C
G
CE
= 125ºC
= 10
0.01
= 30A
= 10mA
10
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
20
500
Fig. 8. Gate Charge
IXYH30N120C3D1
Q
600
30
G
- NanoCoulombs
V
CE
700
- Volts
40
0.1
800
50
900
1000
60
1100
70
1200
80
1