IXA55I1200HJ IXYS, IXA55I1200HJ Datasheet - Page 2
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IXA55I1200HJ
Manufacturer Part Number
IXA55I1200HJ
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA55I1200HJ.pdf
(5 pages)
Specifications of IXA55I1200HJ
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
84
Ic90, Tc = 90°c, Igbt, (a)
54
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
5.5
Rthjc, Max, Igbt (c/w)
0.43
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
ISOPLUS247
Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Diode
F25
F
RM
rr
Equivalent Circuits for Simmulation
1
2
3
4
rec(off)
thJC
90
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
90
600
Data according to IEC 60747and per diode unless otherwise specified
°C
A
A
V;
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA55I1200HJ
min.
min.
0.1
0.05
0.21
0.07
0.0025
0.03
0.03
0.08
IGBT
Ratings
Ratings
typ.
typ.
n/a
n/a
n/a
n/a
n/a
max.
max.
preliminary
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
1.1
n/a
n/a
Diode
28
20090409
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
V
A
A
V
V
A
V
V