IXA70I1200NA IXYS, IXA70I1200NA Datasheet - Page 2
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IXA70I1200NA
Manufacturer Part Number
IXA70I1200NA
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA70I1200NA.pdf
(6 pages)
Specifications of IXA70I1200NA
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
100
Ic90, Tc = 90°c, Igbt, (a)
65
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.35
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
SOT-227B
Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Diode
Equivalent Circuits for Simulation
F25
F
RM
rr
1
2
3
4
rec(off)
thJC
90
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
T = 25°C
T =
V =
di /dt = -
I =
Conditions
I =
C4
F
F
C
C
R
F
90
Data according to IEC 60747and per diode unless otherwise specified
A
A
°C
V
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA70I1200NA
min.
min.
0.1
0.05
0.21
0.07
0.0025
0.03
0.03
0.08
IGBT
Ratings
Ratings
typ.
typ.
n/a
n/a
n/a
n/a
n/a
max.
max.
preliminary
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
1.1
n/a
n/a
Diode
28
20110824b
Unit
K/W
Unit
m
m
mJ
µC
ns
Ω
Ω
A
A
V
V
A
V
V