IXYK120N120C3 IXYS, IXYK120N120C3 Datasheet - Page 4

• Manufacturer Part Number: IXYK120N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYK120N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 220
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 120
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.5
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 90
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 5.3
• Rthjc, Max, Igbt (c/w): 0.10
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
0.001
10,000
0.01
1,000
0.2
0.1
120
100
0.00001
100
80
60
40
20
1
0
0
0
f
= 1 MHz
5
40
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
80
15
C res
I
V
C
CE
- Amperes
C oes
- Volts
20
120
C ies
25
Fig. 11. Maximum Transient Thermal Impedance
0.001
T
Fig. 11. Maximum Transient Thermal Impedance
160
J
= - 40ºC
30
25ºC
150ºC
35
200
Pulse Width - Seconds
40
0.01
aaaaa
280
240
200
160
120
16
14
12
10
80
40
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 150ºC
50
= 1
= 120A
= 10mA
= 600V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
300
100
0.1
150
500
Fig. 8. Gate Charge
Q
G
- NanoCoulombs
200
V
CE
700
- Volts
250
IXYK120N120C3
IXYX120N120C3
1
300
900
350
1100
400
10
1300
450