IXGH100N30B3 IXYS, IXGH100N30B3 Datasheet - Page 4

• Manufacturer Part Number: IXGH100N30B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGH100N30B3

• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247

IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
130
120
110
100
220
200
180
160
140
120
100
10
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
50
1
0
V
CE
Fig. 11. Forward-Bias Safe Operating Area
Fig. 9. Reverse-Bias Safe Operating Area
(sat)
T
R
dV / dt < 10V / ns
20
T
T
Single Pulse
J
G
J
C
= 125ºC
= 2
= 150ºC
= 25ºC
Limit
100
Ω
40
Fig. 7. Transconductance
60
150
10
I
V
C
V
80
CE
- Amperes
CE
- Volts
- Volts
100
200
120
T
J
100
250
= - 40ºC
140
125ºC
25ºC
160
300
1µs
10µs
100µs
1ms
180
1000
200
350
10,000
1,000
1.00
0.10
0.01
100
16
14
12
10
10
0.0001
8
6
4
2
0
0
0
f
V
I
I
= 1 MHz
C
G
CE
20
= 100A
= 10mA
Fig. 12. Maximum Transient Thermal
5
= 150V
0.001
40
10
Fig. 10. Capacitance
Fig. 8. Gate Charge
60
Pulse Width - Seconds
Q
15
G
0.01
Impedance
- NanoCoulombs
V
IXGH100N30B3
80
CE
20
- Volts
100
0.1
25
IXYS REF: G_200N30PB(75)7-05-08-D
120
30
140
C ies
C oes
C res
1
35
160
10
180
40