IXGJ50N60C4D1 IXYS, IXGJ50N60C4D1 Datasheet - Page 7

• Manufacturer Part Number: IXGJ50N60C4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGJ50N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 52
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 21
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 63
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 1
• If, Tj=110°c, Diode, (a): 12
• Rthjc, Max, Diode, (ºc/w): 2
• Package Style: ISO TO-247

IXGJ50N60C4D1
Fig. 22. Reverse Recovery Change
Fig. 21. Foward Current I
vs V
Fig. 23. Peak Reverse Current
F
F
I
vs -di
/dt
Q
vs -di
/dt
r
F
RM
F
,
Fig. 24. Dynamic Parameters Q
Fig. 26. Peak Forward Voltage
Fig. 25. Recovery Time t
vs -di
/dt
r
rr
F
I
vs T
V
and t
vs -di
/dt
RM
VJ
FR
r
F
10
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 27 Maximum Transient Thermal Impedance for Diode
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