IXGP30N60B4D1 IXYS, IXGP30N60B4D1 Datasheet
IXGP30N60B4D1
Manufacturer Part Number
IXGP30N60B4D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGP30N60B4D1.pdf
(2 pages)
Specifications of IXGP30N60B4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
56
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
88
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.66
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-220
High-Gain IGBT
w/ Diode
High-Speed PT Trench IGBT
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
Clamped Inductive Load
T
T
Continuous
Transient
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
Test Conditions
I
V
V
I
C
C
J
J
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 24A, V
CES
, V
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
= V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 10Ω
T
T
J
J
= 125°C
= 125°C
IXGP30N60B4D1
Min.
4.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
@
I
1.13/10
CM
≤
Typ.
1.5
1.5
= 48
V
±20
±30
156
190
150
300
260
600
600
56
30
10
CES
3
Max.
±100
Nm/lb.in.
500
6.5
1.7
10
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-220
Features
Advantages
Applications
•
•
•
•
•
G = Gate
E = Emitter
C110
fi(typ)
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Drives
DC Servo and Robot Drives
PFC Circuits
CES
CE(sat)
G
C E
= 600V
= 30A
= 88ns
≤ ≤ ≤ ≤ ≤ 1.7V
C
Tab = Collector
Tab
= Collector
DS100275A(04/11)
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IXGP30N60B4D1 Summary of contents
Page 1
... CES CE CES GE = ±20V 0V, V GES 24A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGP30N60B4D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 156 = 10Ω ≤ CES 190 -55 ... +150 150 -55 ...
Page 2
... Typ 150°C J 2.5 = 125°C 110 J = 30V 30 R (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGP30N60B4D1 TO-220 (IXGP) Outline Max Pins Gate Emitter ns 1. 0.66 °C/W ° ...