IXGH24N60C4D1 IXYS, IXGH24N60C4D1 Datasheet
IXGH24N60C4D1
Specifications of IXGH24N60C4D1
Related parts for IXGH24N60C4D1
IXGH24N60C4D1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 15V, Note 1 CE(sat) C C110 GE © 2011 IXYS CORPORATION, All Rights Reserved IXGH24N60C4D1 Maximum Ratings 600 600 ±20 ± 130 = 10Ω ≤ CES 190 -55 ... +150 150 -55 ... +150 300 260 1 ...
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... T = 100°C 100 30V R 1.6 °C/W (clamp 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXGH24N60C4D1 TO-247 (IXGH) Outline S ∅ Terminals Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches ns Min. Max. Min 4.7 5.3 .185 A 2 ...
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... V GE 1.2 9V 1.1 8V 1.0 7V 0.9 0.8 6V 0.7 5V 0.6 0 2 25º IXGH24N60C4D1 15V GE 14V 13V 12V 11V 10V Volts CE Fig. 4. Dependence CE(sat) Junction Temperature = 15V I = 48A 24A 12A 100 125 ...
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... < 10V / res 0 100 150 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second IXGH24N60C4D1 Fig. 8. Gate Charge = 300V CE = 24A = 1mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area = 125ºC Ω 200 250 ...
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... 160 CE 140 150 120 140 100 I = 48A 130 C 80 120 60 110 40 100 IXGH24N60C4D1 Collector Current Ω 15V GE = 360V T = 125º 25º Amperes C Gate Resistance d(off 125º ...
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... 100 48A 24A 105 115 125 IXGH24N60C4D1 Collector Current d(on) Ω 15V GE = 360V T = 125º 25º Amperes C IXYS REF: G_24N60C4D1(L2)3-15- ...
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... Fig. 27. Transient Thermal Resistance Junction to Case © 2011 IXYS CORPORATION, All Rights Reserved Fig. 22. Reverse Recovery Change F Q vs. -di / Fig. 25. Recovery Time t vs. -di / IXGH24N60C4D1 Fig. 23. Peak Reverse Current I vs. -di / Fig. 26. Peak Forward Voltage vs. -di / ...