IXGR48N60B3 IXYS, IXGR48N60B3 Datasheet
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGR48N60B3
Manufacturer Part Number
IXGR48N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGR48N60B3.pdf
(2 pages)
Specifications of IXGR48N60B3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
27
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.1
Tfi, Typ, Tj=25°c, Igbt, (ns)
116
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.3
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
GenX3
(Electrically Isolated Back
Surface)
Medium-Speed Low-Vsat PT
IGBTs 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60 Hz, RM, t = 1min
C
C
C
Test Conditions
C
J
C
C
C
C
C
CE
CE
GE
= 25°C
= 250μA, V
= 250μA, V
= 40A, V
= 25°C to 150°C, R
= 0V, V
= 25°C to 150°C
= 25°C
= 110°C
= 110°C (48N60B3D1)
= V
600V IGBTs
= 25°C, 1ms
= 15V, T
CES
, V
GE
GE
VJ
GE
= ± 20V
= 15V, Note 1
GE
CE
= 125°C, R
= 0V
= V
= 0V
GE
GE
= 1MΩ
G
48N60B3
48N60B3D1
= 5Ω
Preliminary Technical Information
T
J
= 125°C
IXGR48N60B3D1
IXGR48N60B3
20..120 / 4.5..27
600
Min.
-55 ... +150
-55 ... +150
3.0
IXGR_B3
Characteristic Values
I
CM
@ ≤ V
Maximum Ratings
= 120
2500
± 20
± 30
600
280
150
150
300
260
600
60
27
27
CE
5
Typ.
1.77
1.74
IXGR_B3D1
Max.
±100 nA
1.75
2.1
5.5
25 μA
N/lb.
m
V~
°C
°C
°C
°C
°C
W
V
V
A
V
V
V
V
V
V
A
A
A
A
A
g
V
I
V
t
ISOPLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C25
fi(typ)
Silocon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Optimized for Low Conduction and
Switching Losses
2500V~
Anti-Parallel Ultra Fast Diode
Square RBSOA
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
E153432
C
E
Electrical Isolation
≤ ≤ ≤ ≤ ≤ 2.1V
= 600V
= 60A
= 116ns
TM
Isolated Tab
E = Emitter
DS99743B(02/11)
Related parts for IXGR48N60B3
IXGR48N60B3 Summary of contents
Page 1
... CES 0V ± 20V GES 40A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGR48N60B3 IXGR48N60B3D1 IXGR_B3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 280 = 5Ω 120 ≤ 150 -55 ...
Page 2
... J = 100V 100°C 100 = 30V J R 1.5 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR48N60B3 IXGR48N60B3D1 ISOPLUS247 (IXGR) Outline Max 200 ns 200 ns 1. 0.83 °C/W ° ...