IXGH32N60A IXYS, IXGH32N60A Datasheet
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IXGH32N60A
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IXGH32N60A Summary of contents
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... CE CES GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 Maximum Ratings 600 = 1 M 600 120 = 0.8 V CES 200 -55 ...
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... -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B Characteristic Values ( unless otherwise specified) J min. typ. ...
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... 125° 25° Volts GE Fig. 5. Admittance Curves © 2003 IXYS All rights reserved IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 200 V = 15V GE 160 13V 11V 9V 7V 120 Fig. 2. Extended Output Characteristics 1 ...
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... Q - nanocoulombs g Fig. 9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 5 2.5 4 2.0 (ON) 1 (OFF) 1.0 2 0 ...
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... Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2003 IXYS All rights reserved IXGH 32N60B IXGH 32N60BD1 IXGT 32N60B 1000 T = 100° 300V nC R 800 I = 60A 30A ...